A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.
Identifieur interne : 002475 ( Main/Exploration ); précédent : 002474; suivant : 002476A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.
Auteurs : RBID : pubmed:21832686Abstract
Reversible tuning of the transport properties of metallic conducting systems is not reported widely in the literature. Here, we report a junction field-effect transistor (FET) based on a transparent conducting oxide (TCO) nanoparticle channel and a solid polymer electrolyte as a gate. The device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. A device with a metallic conducting channel made of indium tin oxide (ITO) nanoparticles exhibits an on/off ratio of 2 × 10(3) even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. An FET device with metal-like conductance is always favored for the low dimensions of the device and a high on-state current. The field-effect mobility is calculated to be 24.3 cm(2) V(-1) s(-1). A subthreshold swing between 230 and 425 mV dec(-1) is observed.
DOI: 10.1088/0957-4484/19/43/435203
PubMed: 21832686
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.</title><author><name sortKey="Dasgupta, S" uniqKey="Dasgupta S">S Dasgupta</name><affiliation wicri:level="3"><nlm:affiliation>Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, PO Box 3640, D-76021 Karlsruhe, Germany.</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, PO Box 3640, D-76021 Karlsruhe</wicri:regionArea><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Karlsruhe</region><settlement type="city">Karlsruhe</settlement></placeName></affiliation></author><author><name sortKey="Gottschalk, S" uniqKey="Gottschalk S">S Gottschalk</name></author><author><name sortKey="Kruk, R" uniqKey="Kruk R">R Kruk</name></author><author><name sortKey="Hahn, H" uniqKey="Hahn H">H Hahn</name></author></titleStmt><publicationStmt><date when="2008">2008</date><idno type="doi">10.1088/0957-4484/19/43/435203</idno><idno type="RBID">pubmed:21832686</idno><idno type="pmid">21832686</idno><idno type="wicri:Area/Main/Corpus">002191</idno><idno type="wicri:Area/Main/Curation">002191</idno><idno type="wicri:Area/Main/Exploration">002475</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Reversible tuning of the transport properties of metallic conducting systems is not reported widely in the literature. Here, we report a junction field-effect transistor (FET) based on a transparent conducting oxide (TCO) nanoparticle channel and a solid polymer electrolyte as a gate. The device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. A device with a metallic conducting channel made of indium tin oxide (ITO) nanoparticles exhibits an on/off ratio of 2 × 10(3) even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. An FET device with metal-like conductance is always favored for the low dimensions of the device and a high on-state current. The field-effect mobility is calculated to be 24.3 cm(2) V(-1) s(-1). A subthreshold swing between 230 and 425 mV dec(-1) is observed.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21832686</PMID><DateCreated><Year>2011</Year><Month>08</Month><Day>11</Day></DateCreated><DateCompleted><Year>2012</Year><Month>10</Month><Day>02</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">0957-4484</ISSN><JournalIssue CitedMedium="Print"><Volume>19</Volume><Issue>43</Issue><PubDate><Year>2008</Year><Month>Oct</Month><Day>29</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.</ArticleTitle><Pagination><MedlinePgn>435203</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/19/43/435203</ELocationID><Abstract><AbstractText>Reversible tuning of the transport properties of metallic conducting systems is not reported widely in the literature. Here, we report a junction field-effect transistor (FET) based on a transparent conducting oxide (TCO) nanoparticle channel and a solid polymer electrolyte as a gate. The device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. A device with a metallic conducting channel made of indium tin oxide (ITO) nanoparticles exhibits an on/off ratio of 2 × 10(3) even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. An FET device with metal-like conductance is always favored for the low dimensions of the device and a high on-state current. The field-effect mobility is calculated to be 24.3 cm(2) V(-1) s(-1). A subthreshold swing between 230 and 425 mV dec(-1) is observed.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Dasgupta</LastName><ForeName>S</ForeName><Initials>S</Initials><Affiliation>Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, PO Box 3640, D-76021 Karlsruhe, Germany.</Affiliation></Author><Author ValidYN="Y"><LastName>Gottschalk</LastName><ForeName>S</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Kruk</LastName><ForeName>R</ForeName><Initials>R</Initials></Author><Author ValidYN="Y"><LastName>Hahn</LastName><ForeName>H</ForeName><Initials>H</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2008</Year><Month>09</Month><Day>22</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2008</Year><Month>9</Month><Day>22</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>8</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2008</Year><Month>10</Month><Day>29</Day><Hour>0</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2008</Year><Month>10</Month><Day>29</Day><Hour>0</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0957-4484(08)86211-3</ArticleId><ArticleId IdType="doi">10.1088/0957-4484/19/43/435203</ArticleId><ArticleId IdType="pubmed">21832686</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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